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半导体器件.金属氧化物场效应晶体管(MOSFETs)用迁移离子试验
Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
参考页数:12P.;A4
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半导体装置.分立装置.微波二极管和晶体管
Semiconductor devices - Discrete devices - Microwave diodes and transistors
参考页数:140P.;A4
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半导体装置.分立器件.绝缘栅双极晶体管(IGBTs)
Semiconductor devices - Discrete devices - Insulated-gate bipolar transistors (IGBTs)
参考页数:60P.;A4
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金属氧化半导体场效应晶体管(MOSFET)的基本温度稳定性试验
Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET)
参考页数:16P.;A4
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电子元器件质量评定协调体系规范.空白详细规范.光电晶体管,光电复合晶体管,光电晶体管阵列
Specification for harmonized system of quality assessment for electronic components - Blank detail specification - Phototransistors, photodarlington transistors, phototransistor arrays
参考页数:22P;A4
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半导体分立器件.电力开关设备的金属氧化物半导体场效应晶体管
Discrete semiconductor devices - Metal-oxide semiconductor field-effect transistors (MOSFETs) for power switching applications
参考页数:64P.;A4
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半导体器件.MOS晶体管的热载流子试验(IEC 62416-2010);德文版本EN 62416-2010
Semiconductor devices - Hot carrier test on MOS transistors (IEC 62416:2010); German version EN 62416:2010
参考页数:12P;A4
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金属氧化半导体场效应晶体管(MOSFET)的基本温度稳定性试验
Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) (IEC 62373:2006); German version EN 62373:2006
参考页数:14P.;A4
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空白详细规范:光电晶体管、光电复合晶体管、光电晶体管阵列
Blank detail specification - Phototransistors, photodarlington transistors, phototransistor arrays; German version EN 120003:1992
参考页数:18P.;A4
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有机晶体管和材料特性的试验方法标准
Standard for Test Methods for the Characterization of Organic Transistors and Materials
参考页数:
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