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开关用双极型晶体管空白详细规范(可供认证用)
价格：￥0.00
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高低频放大环境额定的双极型晶体管空白详细规范(可供认证用)
价格：￥0.00
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半导体分立器件.CS4856～CS4861型硅N沟道耗尽型场效应晶体管详细规范
Semiconductor discrete device.Detail specification for types CS4856～CS4861 silicon N-channel deplition mode field-effect transistor
价格：￥0.00
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半导体分立器件.CS6760和CS6762型硅N沟道增强型场效应晶体管详细规范
Semiconductor discrete device.Detail specification for type CS6760 and CS6762 silicon N-channel enhacement mode field-effect transistor
价格：￥5.00
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半导体分立器件.CS5114～CS5116型硅P沟道耗尽型场效应晶体管详细规范
Semiconductor discrete device.Detail specification for type CS5114～CS5116 silicon P-channel deplition mode field-effect transistor
价格：￥3.00
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电子元器件详细规范 4CS1421 型硅高频双绝缘栅场效应晶体管(可供认证用)
Detail specification for electronic component High frequency silicon dual insulated-gate field-effect transistor of type 4CS1421
价格：￥0.00
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电子元器件详细规范 4CS119型硅高频双绝缘栅场效应晶体管(可供认证用)
Detail specification for electronic component High frequency silicon dual insulated-gate field-effect transistor of type 4CS119
价格：￥0.00
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半导体分立器件.CS3684～CS3687型硅N沟道结型场效应晶体管详细规范
Semiconductor discrete devices.Detail specification for type CS3684～CS3687 silicon N-channel junction mode field-effect transistors
价格：￥0.00
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半导体分立器件.CS3458～CS3460型硅N沟道结型场效应晶体管详细规范
Semiconductor discrete devices.Detail specification for type CS3458～CS3460 silicon N-channel junction mode field-effect transistors
价格：￥0.00
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半导体分立器件 CS205型砷化镓微波功率场效应晶体管详细规范
Semiconductor discrete devices Detail specification for type CS205 GaAs microwave power field effect transistor
价格：￥0.00
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