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半导体分立器件 CS204型砷化镓微波功率场效应晶体管详细规范
Semiconductor discrete devices Detail specification for type CS204 GaAs microwave power field effect transistor
价格：￥0.00
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半导体分立器件.CS203型砷化镓微波低噪声场效应晶体管详细规范
semiconductor discrete device.Detail specification for type CS203 GaAs microwave Low noise field effect transistor
价格：￥4.00
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半导体分立器件.CS6768和CS6770型硅N沟道增强型场效应晶体管详细规范
Semiconductor discrete device.Detail specification for type CS 6768 and CS 6770 silicon N channel enhancement mode field effect transistor
价格：￥5.00
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半导体分立器件.CS4091～CS4093型硅N沟道耗尽型场效应晶体管详细规范
Semiconductor discrete device.Detail specification for type CS4091～CS4093 silicon N-channel deplition mode field-effect transistor
价格：￥3.00
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半导体分立器件.CS141型硅N沟道MOS耗尽型场效应晶体管详细规范
Semiconductor discrete device.Detail specification for type CS141 silicon N-channel MOS deplition mode field-effect transistor
价格：￥3.00
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半导体分立器件.CS140型硅N沟道MOS耗尽型场效应晶体管.详细规范
Semiconductor discrete device.Detail specification for type CS140 Silicon N-channel MOS deplition mode field-effect transistor
价格：￥4.00
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半导体分立器件.CS139型硅P沟道MOS增强型场效应晶体管详细规范
Semiconductor discrete device.Detail specification for type CS139 silicon P-channel MOS enhancement mode field-effect transistor
价格：￥4.00
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电子元器件详细规范 4CS103型硅高频双绝缘栅场效应晶体管(可供认证用)
Detail specification for electronic component High frequency silicon dual insulated-gate field-effect transistor of type 4CS103
价格：￥0.00
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电子元器件详细规范 4CS122型硅高频双绝缘栅场效应晶体管(可供认证用)
Detail specification for electronic component High frequency silicon dual insulated-gate field-effect transistor of type 4CS122
价格：￥0.00
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半导体器件 分立器件 第8部分:场效应晶体管
价格：￥0.00
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