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使用阈下电流&x2013将电离辐射诱导的MOSFET阈电压偏移分离成由于氧化物陷阱和界面状态引起的元件的标准试验方法;电压特性
Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current&x2013;Voltage Characteristics
参考页数:7P.;A4
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使用阈下电流&x2013将电离辐射诱导的MOSFET阈电压偏移分离成由于氧化物陷阱和界面状态引起的元件的标准试验方法;电压特性
Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current&x2013;Voltage Characteristics
参考页数:7P.;A4
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柔性直流输电用电力电子器件技术规范
参考页数:16
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半导体分立器件 3DK101型NPN硅小功率开关晶体管详细规范
Semiconductor discrete devices.Detail specification for silicon NPN low power switching transistor type 3DK101
参考页数:13P.;A4
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半导体分立器件 3DK100型NPN硅小功率开关晶体管详细规范
Semiconductor discrete devices.Detail specification for silicon NPN low power switching transistor type 3DK100
参考页数:12P.;A4
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半导体分立器件 3CG180型硅PNP高频高反压小功率晶体管详细规范
Semiconductor discrete devices.Detail specification for type 3CG180 high frequency high voltage low power PNP silicon transistor
参考页数:12P.;A4
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半导体分立器件 3CG130型硅PNP高频小功率晶体管详细规范
Semiconductor discrete devices.Detail specification for type 3CG130 high frequency low power PNP silicon transistor
参考页数:12P.;A4
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半导体分立器件 3CG120型硅PNP高频小功率晶体管详细规范
Semiconductor discrete devices.Detail specification for type 3CG120 high frequency low power PNP silicon transistor
参考页数:12P.;A4
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半导体分立器件 3CG110型硅PNP高频小功率晶体管详细规范
Semiconductor discrete devices.Detail specification for type 3CG110 high frequency low power PNP silicon transistor
参考页数:12P.;A4
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