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光致发光法测定磷镓砷晶片的组分
Test methods for measurement of composition of gallium arsenide phosphide wafers by photoluminescence
参考页数：9P.;A4
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低位错密度砷化镓抛光片蚀坑密度的测量方法
Test method for measuring etch pit density(EPD) in low dislocation density gallium arsenide wafers
参考页数：5P.;A4
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低位错密度磷化铟抛光片蚀坑密度的测量方法
Test method for measuring etch pit density(EPD) in low dislocation density indium phosphide wafers
参考页数：5P.;A4
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半绝缘砷化镓电阻率、霍尔系数和迁移率测试方法
Test method for measuring resistivity, hall coefficient and determining hall mobility in semi-insulating GaAs single crystals
参考页数：6P.;A4
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半绝缘半导体晶片电阻率的无接触测量方法
Non-contact measurement method for the resistivity of semi-insulating semiconductor wafer
参考页数：6P.;A4
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发光二极管外延片测试方法
Measurement methods for epitaxial wafers of light-emitting diodes
参考页数：12P.;A4
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半绝缘砷化镓中铬浓度的红外吸收测试方法
Methods of measurement for chromium concentration in semi-insulation Gallium arsenide by infra-red absorption
参考页数：2P.;A4
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重掺砷化镓和磷化铟载流子浓度的红外反射测试方法
Methods for measuring carrier concentration of readded Gallium arsenide and Indium phosphide by infra-red reflection
参考页数：4P.;A4
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砷化镓和磷化铟材料补偿度的测试方法
Methods of measurement for compensation degree of Gallium arsenide and Indium phosphide materias
参考页数：7P.;A4
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砷化镓外延片
Gallium arsenide epitaxy wafers
参考页数：12P.;A4
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