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半导体器件 -MOS晶体管热载流子的试验.
Semiconductor devices - Hot carrier test on MOS transistors.
参考页数：13P;A4
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半导体器件 分立器件 第9部分：绝缘栅双极晶体管(IGBT)
Semiconductor devices.Discrete devices.Part 9:Insulated-gate bipolar transistors (IGBT)
价格：￥0.00
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半导体器件 分立器件 第4-1部分:微波二极管和晶体管 微波场效应晶体管空白详细规范
Semiconductor devices Discrete devices Part 4-1: Microwave diodes and transistors-Microwave field effect transistors Blank detail specification
价格：￥0.00
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工业加热用四极管空间详细规范(可供认证用)
Blank detail specification for industrial heating tetrode
价格：￥0.00
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低频放大管壳额定的双极型晶体管空白详细规范
Blank detail specification for case-rated bipolar transistors for low-frequency amplification
价格：￥0.00
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开关用双极型晶体管空白详细规范
Blank detail specification for bipolar transistors for switching applications
价格：￥0.00
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半导体器件 分立器件 第7部分;双极型晶体管 第一篇 高低频放大环境额定的双极型晶体管空白详细规范
Semiconductor devices--Discrete devices. Part 7: Bipolar transistors. Section One--Blank detail specification for ambient-rated bipolar transistors for low and high frequency amplification
价格：￥0.00
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半导体器件 分立器件 第8部分;场效应晶体管 第一篇 1GHz、5W以下的单栅场效应晶体管空白详细规范
Semiconductor devices--Discrete devices. Part 8: Field-effect transistors. Section One--Blank detail specification for single-gate field-effect transistors up to 5W and 1GHz
价格：￥0.00
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绝缘栅双极型晶体管的词汇及文字符号
价格：￥0.00
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